SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTC114TE-7 is an NPN pre-biased small signal transistor manufactured by Diodes Incorporated. It features a built-in biasing resistor (R1) with a nominal value of 10 kΩ and is housed in an SOT523 surface-mount package. The device supports a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (PD) of 150 mW at 25°C ambient temperature. It operates within a temperature range of -55°C to +150°C and has a DC current gain (hFE) ranging from 100 to 600.
Verify the exact ordering suffix against official documentation, as variations such as '-7-F' may indicate specific packaging or compliance attributes. Confirm that the component meets all necessary environmental regulations, including RoHS 3 and REACH, before finalizing procurement decisions for production runs.
Select this component when a compact NPN solution with integrated base resistance is required. Ensure the 10 kΩ input resistor aligns with the driving source impedance. Verify that the SOT523 package dimensions fit the available PCB space and that the thermal characteristics are sufficient for the intended operating environment.
This part belongs to the DDTC (R1-ONLY SERIES) E family from Diodes Incorporated. It is designed as a complementary counterpart to PNP types like the DDTA series. The 'E' designation indicates compliance with specific environmental standards, while the TE suffix typically denotes the SOT523 package type.
Direct substitutes include other NPN pre-biased transistors with similar R1 values and SOT523 packages. Verify pinout compatibility and electrical parameters such as VCEO and IC before substitution.