SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTC115EUA-7-F is an NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with nominal values of R1 = 100 kΩ and R2 = 100 kΩ. The device operates within a supply voltage range up to 50 V and supports a maximum collector current of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 82 at 5 mA, a transition frequency (fT) of 250 MHz, and a power dissipation rating of 200 mW. The component is housed in a SOT-323 package and complies with AEC-Q101 standards for high reliability.
Verify the specific ordering suffix '-7-F' corresponds to the standard 3,000-unit reel packaging configuration. Confirm that the 'N24' marking code aligns with the required production date codes for your assembly timeline. Ensure compliance with RoHS 3 directives if operating in restricted substance zones.
Select this component when an NPN digital transistor with 100 kΩ internal biasing resistors is required. The SOT-323 package is suitable for space-constrained designs. Consider the complementary DDTA115EUA-7-F for PNP applications. Verify thermal management requirements against the 625 °C/W junction-to-ambient resistance specification.
This part belongs to the DDTC (R1 = R2 Series) UA family from Diodes Incorporated. It shares electrical similarities with other members like DDTC114EUA but differs in resistor values. The series is designed for surface-mount technology and offers a compact alternative to discrete resistor-transistor combinations.
Direct substitutes include the DDTA115EUA-7-F for PNP polarity or other DDTC115 variants with identical resistor ratios. Verify pinout compatibility and thermal characteristics before substitution.
The nominal values are R1 = 100 kΩ and R2 = 100 kΩ.
Yes, it is qualified to AEC-Q101 standards for high reliability.
The maximum power dissipation is 200 mW.