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The DDTC115GUA-7-F is an NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features a built-in biasing resistor (R2) with a nominal value of 100 kOhms and utilizes SOT-323 packaging. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 200 mW. The device exhibits a minimum DC current gain (hFE) of 82 at IC=5mA, VCE=5V, and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging configuration. Ensure compliance with environmental directives such as RoHS and REACH requirements relevant to your region. Confirm that the component meets the necessary flammability ratings for your intended assembly process.
Select this component when a single NPN pre-biased transistor with a 100 kOhm internal resistor is required in a compact SOT-323 package. Consider the 200 mW power dissipation limit and 50 V voltage rating during thermal and electrical design. Verify compatibility with complementary PNP types if differential signaling is needed.
This part belongs to the DDTC115 series from Diodes Incorporated, designed as a surface-mount solution for space-constrained electronics. The 'UA' designation indicates the SOT-323 case style. It serves as a direct replacement for discrete resistor-transistor networks, reducing board space and assembly complexity.
Direct substitutes include other DDTC115 variants with different resistor values or packages. Cross-brand equivalents may exist but require verification of pinout, hFE, and voltage ratings.