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The DDTC115TCA-7 is an NPN pre-biased transistor from the R1-only series, housed in a surface-mount SOT23 package. It integrates a single base resistor (R1) with a nominal value of 100 kΩ. The device features a collector-emitter breakdown voltage (BVCEO) of 50 V and a continuous collector current rating of 100 mA. Power dissipation is rated at 200 mW, with a thermal resistance (junction to ambient) of 625 °C/W. The DC current gain (hFE) ranges from 100 to 600, and the transition frequency (fT) is 250 MHz. Operating temperature spans from -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details and availability status. The datasheet lists DDTC115TCA-7-F as active; ensure the exact part number matches the required reel size and packing quantity specifications before procurement.
Select this component when a 100 kΩ base resistor is required for NPN switching applications. Ensure the circuit design accommodates the 200 mW power dissipation limit and the 50 V collector-emitter voltage rating. Verify that the SOT23 package dimensions fit the target PCB layout constraints.
This component belongs to the DDTC R1-only series of pre-biased transistors manufactured by Diodes Incorporated. The series offers various resistor values and configurations within the SOT23 package family. Complementary PNP types are available in the DDTA series.
Direct substitutes include other NPN pre-biased transistors with similar electrical characteristics and a 100 kΩ base resistor in an SOT23 package. Verify pinout compatibility and thermal resistance ratings when considering alternative manufacturers.