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The DDTC115TE-7-F is an NPN pre-biased transistor from Diodes Incorporated, housed in a SOT-523 package. It features a built-in base resistor (R1) with a nominal value of 100 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning -55°C to +150°C. The DC current gain (hFE) ranges from 100 to 600, and the transition frequency (fT) is typically 250 MHz.
Verify component authenticity by checking the marking code against official documentation. Confirm compliance status through manufacturer quality statements. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate packaging specifications match project needs before procurement.
Select this component when a 100 kΩ base resistor is required for NPN switching. Consider the SOT-523 package size for space-constrained designs. Verify thermal management capabilities given the 150 mW power dissipation limit. Check if automotive qualification is necessary for the target application environment.
This part belongs to the DDTC(R1-ONLY SERIES) E family, which includes various resistor values. It shares the same physical package and general electrical characteristics as other members like the DDTC114TE-7-F and DDTC123TE-7-F, differing primarily in the internal base resistance value.
Direct substitutes include parts with identical electrical parameters and pinout. Verify that any replacement maintains the 100 kΩ base resistance and fits within the SOT-523 footprint. Ensure compatibility with existing PCB pad layouts and soldering profiles.