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The DDTC115TE-7-F is an NPN pre-biased transistor from Diodes Incorporated, housed in a SOT-523 package. It features a built-in base resistor (R1) with a nominal value of 100 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 150 mW. The device offers a DC current gain (hFE) ranging from 100 to 600 at IC = 1mA, VCE = 5V, and a transition frequency (fT) of 250 MHz. Operating temperature ranges from -55°C to +150°C.
Verify the exact ordering suffix against official documentation, as variations such as -7-F indicate specific packaging configurations like tape and reel quantities. Confirm compliance requirements including RoHS 3 and REACH status prior to procurement. Ensure the selected variant matches the required automotive or standard grade specifications if applicable to the target application environment.
Select this component when a compact NPN solution with integrated biasing is required. The 100 kΩ internal resistor suits applications needing moderate base drive currents. Consider the SOT-523 package dimensions for space-constrained PCB layouts. Verify that the 50 V collector-emitter voltage rating aligns with the maximum operating voltage of the intended circuit to ensure safe operation under all conditions.
This part belongs to the DDTC (R1-ONLY SERIES) E family, which includes various resistor values for different biasing needs. Complementary PNP types are available in the DDTA series. The device is manufactured in IATF 16949 certified facilities and is AEC-Q101 qualified for automotive use, ensuring high reliability and consistent quality standards across production batches.
Direct substitutes include other NPN pre-biased transistors with similar R1 values and VCEO ratings. Check pinout compatibility and thermal resistance characteristics when replacing. Verify that the alternative component meets the same RoHS and halogen-free requirements to maintain regulatory compliance in the final assembly.