DDTC123EE-7-F

DDTC123EE-7-F

$0.15
  • Description:TRANS PREBIAS NPN 50V SOT523
  • Series:DDTC (R1 = R2 SERIES) EE

SKU:036162440de3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT523
  • Series:DDTC (R1 = R2 SERIES) EE
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:SOT-523

Download product information

DDTC123EE-7-F

Overview

The DDTC123EE-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a SOT523 surface-mount package. It features built-in biasing resistors with nominal values of R1 = 2.2 kΩ and R2 = 2.2 kΩ. The device supports a maximum supply voltage (VCC) of 50 V and a continuous collector current (IC) of 100 mA. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C. The transition frequency (fT) is typically 250 MHz, and the minimum DC current gain (hFE) is 20.

Feature Summary

  • Epitaxial planar die construction for reliable performance
  • Integrated equal-value biasing resistors (R1 = R2)
  • RoHS compliant and halogen/antimony-free green device

Applications

  • General-purpose switching applications
  • Driver circuits for low-power loads
  • Logic interface level shifting

Procurement Notes

Verify the complete part number including the suffix '-7-F' to ensure correct packaging specifications. Confirm that the standard marking code matches the specific order quantity requirements. Check for any recent product change notifications or environmental compliance updates directly from the manufacturer before finalizing procurement orders.

Selection Notes

Select this component when a single NPN transistor with integrated base and emitter resistors is required in a compact SOT523 footprint. Ensure the 50 V collector-emitter breakdown voltage and 100 mA current rating meet the circuit demands. Verify that the 2.2 kΩ resistor values provide appropriate drive characteristics for the intended logic levels.

Part Context

This component belongs to the DDTC (R1 = R2 Series) EE family from Diodes Incorporated. It serves as the NPN counterpart to the DDTA series PNP devices. The 'EE' designation specifically indicates the SOT523 case style and the equal-resistor configuration within the broader digital transistor portfolio.

Replacement Considerations

Direct substitutes include other Diodes Incorporated parts from the same series such as DDTC143EE-7-F or DDTC114EE-7-F, which share identical electrical characteristics but differ in resistor values.

DDTC123EE-7-FDDTC123EE-7-F
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