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The DDTC123TE-7-F is an NPN pre-biased transistor from Diodes Incorporated, housed in a SOT523 package. It features a built-in biasing resistor (R1) with a nominal value of 2.2 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning -55°C to +150°C. The DC current transfer ratio (hFE) ranges from 100 to 600 at IC = 1mA and VCE = 5V. The transition frequency (fT) is typically 250 MHz.
Verify the component against the official Diodes Incorporated datasheet DS30315 Rev. 11-2 to confirm authenticity. Ensure the marking code matches 'N03' for the DDTC123TE-7-F variant. Check compliance with RoHS 3 and REACH regulations as specified by the manufacturer. Confirm packaging details align with the 3,000 units per reel specification.
Select this component when a compact NPN solution with integrated base resistance is required. The 2.2 kΩ internal resistor eliminates external components, reducing board space. Verify that the 100 mA current rating and 50 V voltage limits meet the application requirements. Consider the SOT523 package dimensions for layout constraints.
This part belongs to the DDTC (R1-ONLY SERIES) E family, which includes various resistor values for different drive requirements. Complementary PNP types are available in the DDTA series. The 'E' suffix indicates the specific series configuration with only the base resistor included.
Direct substitutes within the same series include DDTC113TE-7-F (1kΩ), DDTC143TE-7-F (4.7kΩ), and other variants with different R1 values but identical electrical characteristics and package.