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The DDTC124GE-7-F is an NPN pre-biased small signal surface mount transistor from Diodes Incorporated, housed in a SOT523 package. It features an epitaxial planar die construction with a built-in biasing resistor (R2) of 22 kΩ nominal value. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Power dissipation is rated at 150 mW, with a thermal resistance (RθJA) of 833 °C/W. The DC current transfer ratio (hFE) has a minimum value of 56 at IC = 5mA and VCE = 5V. The gain-bandwidth product (fT) is typically 250 MHz. Operating and storage temperature ranges extend from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit reel size on an 8mm tape width. Confirm compliance requirements such as AEC-Q101 qualification and RoHS 3 directives match project specifications. Check for any recent Product Change Notifications (PCN) that may affect packaging or manufacturing location before finalizing procurement orders.
Select this component when a single NPN digital transistor with a 22kΩ emitter-base bleeder resistor is required. Ensure the 50V collector-emitter voltage rating meets the circuit's maximum operating voltage. Verify that the 100mA continuous collector current capability is sufficient for the load. Consider the SOT523 package dimensions for PCB layout constraints.
This part belongs to the DDTC (R2-ONLY SERIES) E family from Diodes Incorporated. It is specifically designed as an NPN pre-biased transistor with only the R2 resistor integrated. Complementary PNP types are available in the DDTA series. The 'GE' suffix indicates the SOT523 package, while '-7-F' denotes the reel quantity and compliance status.
Direct replacements within the same series include DDTC114GE-7-F (10kΩ), DDTC144GE-7-F (47kΩ), and DDTC115GE-7-F (100kΩ). For complementary PNP functionality, consider the DDTA124TE-7-F. Ensure any substitute maintains the SOT523 footprint and electrical ratings.