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The DDTC125TE-7 is an NPN pre-biased transistor from the R1-only series, housed in a SOT523 surface-mount package. It integrates a single built-in biasing resistor (R1) with a nominal value of 200 kΩ and a tolerance of ±30%. The device features epitaxial planar die construction and supports a maximum collector current of 100 mA with a collector-emitter breakdown voltage of 50 V. Power dissipation is rated at 150 mW, and the transition frequency is typically 250 MHz. Operating temperature ranges from -55°C to +150°C.
Verify component status prior to ordering as this specific part number may be obsolete. Confirm that the standard marking code and reel size align with manufacturing capabilities. Ensure compliance with RoHS 3 directives and halogen-free specifications if required by the target application environment.
Select this component when a high-value base resistor is needed for low-current switching. Compare the 200 kΩ nominal resistance against other variants in the DDTC1xxxE series. Verify that the SOT523 footprint matches the PCB layout constraints and that the thermal resistance characteristics are sufficient for the intended power dissipation levels.
This component belongs to the DDTC (R1-ONLY SERIES) E family manufactured by Diodes Incorporated. It serves as a specialized variant within the broader range of pre-biased transistors designed for compact surface-mount implementations. The series offers complementary PNP types and various resistance values to accommodate different drive requirements.
Direct substitutes include other active parts from the DDTC1xxxE series with similar electrical ratings. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or updated revisions of the same product line.
The integrated base biasing resistor (R1) has a nominal value of 200 kΩ.
Yes, it is AEC-Q101 qualified and PPAP capable for use in automotive applications requiring specific change control.
The maximum continuous collector current (IC(MAX)) is rated at 100 mA.