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The DDTC144TE-7 is an NPN pre-biased transistor from the R1-only series, housed in a SOT523 surface-mount package. It features a built-in biasing resistor (R1) with a nominal value of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 50 V, with a continuous collector current rating of 100 mA. Power dissipation is rated at 150 mW, and the DC current transfer ratio (hFE) ranges from 100 to 600 at IC = 1 mA and VCE = 5 V. The gain-bandwidth product (fT) is typically 250 MHz. Operating and storage temperatures span from -55°C to +150°C.
Verify the complete part number including suffixes such as -7-F against official Diodes Incorporated documentation to ensure correct packaging and compliance status. Confirm that the intended application environment aligns with the specified operating temperature range and power dissipation limits. Check for any recent Product Change Notices regarding manufacturing sites or materials before finalizing procurement orders.
Select this component when a compact NPN digital transistor with a 47 kΩ base resistor is required in a SOT523 footprint. Ensure the circuit design accounts for the 50 V voltage ratings and 100 mA current limits. Consider the complementary PNP types available in the DDTA series if a matching pair is needed for push-pull configurations.
This component belongs to the DDTC (R1-ONLY SERIES) E family manufactured by Diodes Incorporated. The series includes various resistor values ranging from 1 kΩ to 200 kΩ, all sharing the same SOT523 package and electrical characteristics except for the internal biasing resistance. The 'E' designation indicates compliance with specific automotive standards.
DDTC144TE-7-F
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The nominal value of the built-in biasing resistor (R1) is 47 kΩ.
The maximum power dissipation is 150 mW at an ambient temperature of +25°C.