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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The DDTD113EC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and integrates built-in biasing resistors with nominal values of R1 = 1kΩ and R2 = 1kΩ. The device supports a maximum supply voltage (VCC) of 50 V and a continuous collector current (IC) of 500 mA. Power dissipation is rated at 250 mW, with a thermal resistance junction-to-ambient of 500 °C/W. Operating and storage temperatures range from -55°C to +150°C. The component is housed in an SOT23 package.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Integrated biasing resistors eliminate the need for external input components
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free "Green" device
Applications
- Inverter circuits without requiring external input resistors
- Switching applications utilizing integrated bias networks
- Surface-mount assembly processes compatible with standard SOT23 footprints
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and marking details. Confirm that the selected component meets all applicable environmental directives and quality standards required for the intended deployment environment before finalizing procurement decisions.
Selection Notes
Select this component when an NPN configuration with 1kΩ base and emitter resistors is required. Ensure the design accommodates the 500 mA collector current limit and 250 mW power dissipation constraints. Verify compatibility with the SOT23 footprint dimensions and thermal management requirements for the target application.
Part Context
This part belongs to the DDTD series of NPN pre-biased transistors produced by Diodes Incorporated. The series offers various resistor combinations within the same SOT23 mechanical outline. Complementary PNP types are available in the DDTB series. The product utilizes a standardized surface-mount package suitable for automated assembly.
Replacement Considerations
Direct substitutes include other DDTD series variants with matching resistor values or different configurations such as DDTD113ZC-7-F. Verify pinout compatibility and electrical ratings before substitution.
