DDTD113EU-7-F

DDTD113EU-7-F

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:2d74ab77ea00 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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DDTD113EU-7-F

Overview

The DDTD113EU-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It features built-in biasing resistors with nominal values of R1 = 1kΩ and R2 = 10kΩ. The device supports a supply voltage (VCC) up to 50V and a continuous collector current of 500mA. Electrical characteristics include a minimum DC current gain (hFE) of 33 at 50mA and a typical gain-bandwidth product of 200MHz. Thermal performance specifies a power dissipation of 250mW and a junction-to-ambient thermal resistance of 500°C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

  • Epitaxial planar die construction for reliable switching performance
  • Integrated biasing resistors eliminate the need for external input components
  • Surface-mount SOT323 package optimized for automated assembly processes

Applications

  • General-purpose digital switching circuits
  • Inverter configurations requiring simplified input networks
  • Automotive applications meeting specific change control standards

Procurement Notes

Verify component status before design finalization as this part number is listed as obsolete in official documentation. Confirm availability through authorized distributors or secondary markets if immediate procurement is required. Ensure that any replacement components maintain identical pinout compatibility and electrical specifications to prevent circuit redesign. Validate RoHS compliance requirements against local regulatory standards prior to ordering.

Selection Notes

Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 1kΩ base resistor suits moderate drive currents, while the 10kΩ emitter resistor provides stability. Consider the 500mA current limit and 50V voltage rating against load requirements. Evaluate thermal constraints given the 250mW dissipation limit in small packages. Verify AEC-Q101 qualification needs for automotive environments.

Part Context

This component belongs to the DDTD(XXXX)U series of NPN pre-biased transistors. It shares the same SOT323 footprint and epitaxial construction as other variants like the DDTD113ZU-7-F. Differences primarily involve internal resistor ratios and specific marking codes. The series offers complementary PNP types within the DDTA family for push-pull applications.

Replacement Considerations

Direct substitutes include the DDTD113ZU-7-F, which maintains identical resistor values but may differ in marking. Verify equivalent electrical parameters such as VCEO, IC, and hFE. Check package dimensions and pin assignments to ensure mechanical compatibility without PCB layout modifications.

DDTD113EU-7-FDDTD113EU-7-F

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