DDTD113ZU-7-F

Overview

The DDTD113ZU-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT-323 package. It integrates built-in biasing resistors with nominal values of R1 = 1 kΩ and R2 = 10 kΩ. The device features a supply voltage rating of 50 V, a continuous collector current of 500 mA, and a power dissipation capacity of 250 mW at 25°C ambient temperature. It operates within a temperature range of -55°C to +150°C and includes a minimum DC current gain (hFE) of 56.

Feature Summary

• Epitaxial planar die construction for reliable performance
• Integrated biasing resistors simplify circuit design
• Surface-mount package optimized for automated assembly
• Fully RoHS compliant and halogen-free green device

Applications

• General-purpose switching applications
• Driver circuits for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify the active status of the part number through official Diodes Incorporated channels before procurement. Confirm that the specific ordering suffix matches the required packaging quantity and carrier type. Ensure compliance with applicable environmental directives such as RoHS 3 and REACH requirements for the intended market.

Selection Notes

Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 1 kΩ input resistor limits drive current effectively for standard logic levels. Verify that the 500 mA output current capability meets the load requirements and that the thermal resistance allows for adequate heat dissipation in the target application environment.

Part Context

This component belongs to the DDTD series of NPN pre-biased transistors from Diodes Incorporated. It shares the same electrical characteristics as the DDTD113EU but utilizes the SOT-323 package instead of the SOT-23 variant. The 'Z' designation specifically identifies the 1 kΩ / 10 kΩ resistor combination within the product family.

Replacement Considerations

DDTD113EU-7-F