DDTD114EC-7-F

Overview

The DDTD114EC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with nominal values of R1 = 10 kΩ and R2 = 10 kΩ. The device is housed in a SOT-23 package and supports a collector continuous current of 500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 56, a supply voltage rating of 50 V, and a power dissipation capacity of 250 mW. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Integrates built-in biasing resistors for simplified circuit design
• Utilizes epitaxial planar die construction for reliability
• Compliant with RoHS standards and free from halogen and antimony

Applications

• General-purpose switching applications
• Driver circuits requiring integrated base resistance
• Automotive electronics (subject to specific qualification requirements)

Procurement Notes

Verify the component status as Active before procurement. Confirm that the required packaging quantity aligns with the standard reel size of 3,000 units. Ensure compliance with moisture sensitivity level 1 handling procedures during storage and assembly processes.

Selection Notes

Select this model when a single NPN transistor with a 10kΩ/10kΩ resistor ratio is needed. Verify that the 500mA collector current and 50V voltage ratings meet the application's maximum load requirements. Consider thermal derating curves if operating near the 150°C upper temperature limit.

Part Context

This component belongs to the DDTD series of NPN pre-biased transistors. It serves as a functional alternative to discrete resistor-transistor networks, offering space savings on printed circuit boards. The 'EC' suffix denotes the specific resistor configuration within the broader DDTD product family.

Replacement Considerations

DDTD113EC-7-F: Features different nominal resistor values (R1=1kΩ, R2=1kΩ). DDTB114EC-7-F: Complementary PNP type; verify polarity requirements.