DDTD114GC-7-F

Description：TRANS PREBIAS NPN 50V SOT23-3
Series：-

SKU:a6446f93c730 Category: Single, Pre-Biased Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Resistors Included：R2 Only
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：-
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)：500nA (ICBO)
Frequency - Transition：200 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3

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DDTD114GC-7-F

Overview

The DDTD114GC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and integrates a single biasing resistor (R2) with an open R1 configuration within a SOT23 package. The device supports a maximum collector current of 500 mA and a supply voltage of 50 V, with a power dissipation rating of 250 mW. Electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = 5mA and a typical gain-bandwidth product (fT) of 200 MHz. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Epitaxial planar die construction for reliable performance
Integrated biasing resistors simplify circuit design
Totally lead-free and fully RoHS compliant
Halogen and antimony free "Green" device

Applications

General-purpose switching applications
Driver circuits for low-power loads
Logic interface buffering

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the obsolete status indicated in manufacturer documentation before finalizing procurement plans. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements during sourcing. Validate packaging specifications against project needs.

Selection Notes

Select this component for designs requiring high collector current capability in a compact SOT23 footprint. Consider the specific internal resistor configuration where R1 is open and only R2 is present. Evaluate thermal resistance parameters for adequate heat dissipation in the target application environment.

Part Context

This part belongs to the DDTD series of NPN pre-biased transistors from Diodes Incorporated. It shares the same physical package and general electrical ratings as other members like the DDTD114TC but differs in internal resistor topology. The series offers complementary PNP types under the DDTB designation.