DDTD114TC-7-F

Overview

The DDTD114TC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features a built-in 10 kΩ base resistor (R1) and an open emitter resistor (R2). The device utilizes epitaxial planar die construction within an SOT23 package. Key electrical ratings include a collector-emitter breakdown voltage of 40 V, a continuous collector current of 500 mA, and a power dissipation capacity of 250 mW at 25°C ambient temperature. The component operates across a temperature range from -55°C to +150°C.

Feature Summary

• Integrates internal biasing resistors to simplify circuit design and reduce PCB footprint.
• Utilizes epitaxial planar die construction for reliable performance.
• Compliant with RoHS standards and free from halogen and antimony.

Applications

• General-purpose switching applications
• Driver circuits for low-power loads
• Logic interface buffering

Procurement Notes

Verify the obsolete status of this specific part number before initiating any procurement activities. Confirm availability through authorized distributors or secondary market channels. Ensure that any replacement components meet the required electrical specifications and physical dimensions to maintain compatibility with existing designs.

Selection Notes

Select this component when a high-current NPN switch with integrated biasing is required in a compact SOT23 package. Consider the 500 mA output current capability and 40 V breakdown voltage limits during design. Evaluate thermal management requirements due to the 250 mW power dissipation rating in small outline packages.

Part Context

This component belongs to the DDTD series of NPN pre-biased transistors produced by Diodes Incorporated. The series offers various resistor combinations and current ratings within the SOT23 form factor. The DDTD114TC variant specifically provides a 10 kΩ base resistor configuration suitable for standard logic level driving applications.

Replacement Considerations

DDTD114EC-7-F