DDTD114TU-7-F

Description：TRANS PREBIAS NPN 50V SOT323
Series：-

SKU:4e94fb83ef3a Category: Single, Pre-Biased Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Resistors Included：R1 Only
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：10 kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)：500nA (ICBO)
Frequency - Transition：200 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SOT-323

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DDTD114TU-7-F

Overview

The DDTD114TU-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT323 package. It features built-in biasing resistors with nominal values of R1 = 10 kΩ and R2 = Open. The device has a collector-emitter breakdown voltage (BVCEO) of 40 V and a supply voltage rating of 50 V. Maximum continuous collector current is 500 mA, with power dissipation rated at 250 mW. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Epitaxial planar die construction for reliable performance
Integrated biasing resistors simplify circuit design
Surface-mount package optimized for automated assembly
Totally lead-free and fully RoHS compliant

Applications

General-purpose switching applications
Driver circuits for low-power loads
Logic level translation interfaces

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the obsolete status indicated in official documentation before finalizing procurement plans. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements during sourcing. Validate that the specific ordering suffix matches the required packaging specifications.

Selection Notes

Select this component when a single NPN transistor with a 10 kΩ base resistor is required in a compact SOT323 footprint. Consider the 40 V collector-emitter breakdown voltage limit for circuit design. Evaluate the 250 mW power dissipation capability against thermal constraints. Verify if the open emitter resistor configuration meets the specific biasing needs of the application.

Part Context

This part belongs to the DDTD series of NPN pre-biased transistors from Diodes Incorporated. The series offers various resistor combinations within the SOT323 package. The DDTD114TU variant specifically provides a 10 kΩ input resistor with no output resistor. This family targets space-constrained designs requiring simplified biasing networks.