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The DDTD122LC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with nominal values of R1 = 0.22 kΩ and R2 = 10 kΩ. The device operates with a maximum collector-emitter voltage (BVCEO) of 40 V and a continuous collector current of 500 mA. Power dissipation is rated at 250 mW, with an operating temperature range from -55°C to +150°C. The component utilizes SOT-23 packaging and exhibits a gain-bandwidth product of 200 MHz.
Verify the obsolete status of this specific part number before initiating any procurement actions. Confirm availability through authorized channels or alternative distributors. Ensure that any replacement components meet the required electrical specifications and package dimensions to maintain system compatibility.
Select the complementary PNP type, DDTB122LC-7-F, when a matching negative logic configuration is required. Verify that the 500 mA current rating and 40 V breakdown voltage align with the load requirements. Consider the thermal resistance characteristics if high ambient temperatures are expected in the application environment.
This component belongs to the DDTD series of NPN pre-biased transistors from Diodes Incorporated. It shares the same epitaxial planar construction and SOT-23 package form factor as other members of the family, differing primarily in the internal resistor network values and polarity.
DDTD122TC-7-F
The DDTD122LC-7-F includes a base resistor (R1) of 0.22 kΩ and an emitter resistor (R2) of 10 kΩ.
For automotive applications requiring specific change control, AEC-Q qualification, and PPAP capability, customers must contact Diodes Incorporated directly, as standard production may not include these specific certifications.
The maximum power dissipation is 250 mW when mounted on an FR4 PC board with the recommended pad layout at an ambient temperature of +25°C.