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The DDTD122LU-7-F is an obsolete NPN pre-biased transistor manufactured by Diodes Incorporated. It integrates a single NPN bipolar junction transistor with built-in biasing resistors (R1 = 0.22 kΩ, R2 = 10 kΩ) in a surface-mount SOT323 package. The device supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 500 mA. Key electrical characteristics include a minimum DC current gain of 56 at 50 mA and a typical gain-bandwidth product of 200 MHz. It operates within a temperature range of -55°C to +150°C and dissipates up to 250 mW.
This component is officially classified as Obsolete by the manufacturer. Verify end-of-life status and availability through authorized channels before finalizing designs. Confirm RoHS compliance and lead-free specifications against specific project requirements. Review datasheet revision history for any parameter updates prior to implementation.
Select this part only if the specific resistor ratio of 0.22 kΩ to 10 kΩ matches the required base drive characteristics. Ensure the 40 V collector-emitter breakdown voltage meets the circuit's maximum supply constraints. Consider the SOT323 footprint dimensions during PCB layout planning.
The DDTD122LU-7-F belongs to the DDTD series of NPN pre-biased transistors from Diodes Incorporated. This series provides various resistor combinations within the SOT323 package to accommodate different logic families and drive requirements. It serves as a compact alternative to discrete resistor-transistor networks.
DDTD122TU-7-F: Identical NPN transistor but features an open emitter resistor configuration instead of the 10 kΩ pull-down resistor found in the LU variant.