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The DDTD122LU-7 is an NPN pre-biased transistor manufactured by Diodes Incorporated in a SOT323 surface-mount package. It integrates internal biasing resistors, specifically R1 at 0.22kΩ and R2 at 10kΩ, to simplify circuit design. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 500mA. Electrical characteristics include a minimum DC current gain (Gl) of 56 and a gain-bandwidth product (fT) of 200MHz. Operating temperatures range from -55°C to +150°C with a power dissipation rating of 250mW.
Verify the exact ordering suffix when sourcing components, as variations exist within the series. Confirm that the received part matches the specified resistor values and package type. Check for any end-of-life status updates directly from the manufacturer before finalizing procurement plans.
Select this component when an NPN configuration with integrated biasing is required. Ensure the 0.22kΩ base resistor and 10kΩ emitter resistor values align with the target circuit requirements. Verify that the SOT323 package dimensions fit the available board space constraints.
This component belongs to the DDTD series of NPN pre-biased transistors offered by Diodes Incorporated. It serves as the complementary counterpart to the DDTB series, which provides PNP configurations. Both series share similar electrical characteristics and packaging options for balanced design flexibility.
DDTD142JU-7-F
The DDTD122LU features a base resistor (R1) of 0.22kΩ and an emitter resistor (R2) of 10kΩ.
Yes, it is qualified to JEDEC standards for high reliability. For specific automotive change control requirements, consult the related automotive grade parts.
The maximum power dissipation is 250mW when mounted on an FR4 PC board with the minimum recommended pad layout.