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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：220 Ohms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
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Overview
The DDTD122TU-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT323 package. It features a single built-in biasing resistor (R1) with a nominal value of 0.22 kΩ and an open R2 configuration. The device supports a collector-emitter breakdown voltage (BVCEO) of 40 V and a continuous collector current of 500 mA. Electrical characteristics include a DC current transfer ratio (hFE) ranging from 100 to 600 at IC = 5 mA, and a gain-bandwidth product (fT) of 200 MHz. Power dissipation is rated at 250 mW, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Integrates a single internal biasing resistor for simplified circuit design
- Designed for automated assembly using a compact surface-mount package
- Qualified to JEDEC standards for high reliability applications
Applications
- General-purpose switching circuits requiring integrated biasing
- Driver stages for low-power loads in consumer electronics
- Logic interface circuits for translating microcontroller signals
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm the obsolete status of this specific part number before finalizing procurement plans. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet documentation. Validate that the SOT323 package dimensions align with the target PCB layout constraints.
Selection Notes
Select this component when a single-resistor NPN pre-biased transistor is required within a small form factor. Compare against the DDTD122LU variant if a dual-resistor configuration is necessary instead of the open R2 setup found in the TU series. Evaluate thermal resistance and power dissipation limits relative to the expected ambient operating conditions and PCB copper area availability.
Part Context
This component belongs to the DDTD series of NPN pre-biased transistors produced by Diodes Incorporated. It shares the same electrical core specifications as other members of the family but differs in its internal resistor network configuration. The TU suffix specifically denotes the inclusion of only the base resistor (R1), distinguishing it from LU variants which include both R1 and R2 networks.
Replacement Considerations
DDTD122LU-7-F
FAQ
What is the nominal value of the internal biasing resistor?
The nominal value of the internal biasing resistor (R1) is 0.22 kΩ.
Is the second resistor (R2) present in this component?
No, the R2 terminal is left open in the DDTD122TU configuration.
What is the maximum collector-emitter breakdown voltage?
The collector-emitter breakdown voltage (BVCEO) is rated at 40 V.
