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The DDTD122TU-7 is a single NPN pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It integrates a base resistor (R1) with an open emitter resistor configuration (R2). Key electrical specifications include a collector-emitter breakdown voltage of 40 V and a collector-base breakdown voltage of 50 V. The device supports a maximum continuous collector current of 500 mA and offers a DC current transfer ratio (hFE) ranging from 100 to 600 at IC = 5mA. It features a gain-bandwidth product of 200 MHz and a power dissipation rating of 250 mW.
Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component status matches project requirements, as some variants within this series may be marked obsolete. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3 if applicable to the target market.
Select this component when a single NPN pre-biased transistor with an open emitter resistor is required. Verify that the 40V collector-emitter breakdown voltage meets the circuit's supply requirements. Consider the 250mW power dissipation limit and thermal resistance characteristics for proper heat management on FR4 PCBs.
This part belongs to the DDTD family of NPN pre-biased transistors produced by Diodes Incorporated. It is designed as a complementary counterpart to the DDTB series, which provides PNP types. The device utilizes epitaxial planar die construction and is intended for automated assembly processes due to its surface-mount packaging.
Check for availability of active status parts within the same series, as some variants like DDTD122LU-7-F are listed as obsolete. Ensure any substitute maintains the SOT323 package and identical electrical parameters, specifically the 40V BVCEO and 200MHz fT.