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The DDTD123TC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features a built-in biasing resistor network consisting of R1 (2.2 kΩ) and an open circuit for R2, housed in an SOT-23 package. The device supports a maximum supply voltage of 50 V and a continuous collector current of 500 mA. Thermal characteristics include a power dissipation rating of 250 mW and a junction-to-ambient thermal resistance of 500 °C/W. Operating and storage temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix against official manufacturer documentation to confirm availability status and packaging details. Confirm that the selected variant meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.
Select this component when a single NPN transistor with a 2.2 kΩ base resistor is required. Ensure the application current does not exceed the 500 mA limit and verify that the SOT-23 package dimensions fit the target PCB layout constraints.
This part belongs to the DDTD series of NPN pre-biased transistors. It serves as a complementary counterpart to the DDTB series, which offers PNP configurations. Both series share similar mechanical footprints and electrical characteristics tailored for compact surface-mount designs.
DDTD123EC-7-F
The internal resistor R1 has a nominal value of 2.2 kΩ, while R2 is an open circuit.
The maximum continuous collector current (IC) is rated at 500 mA.
Yes, the device has a gain-bandwidth product (fT) of approximately 200 MHz under specified test conditions.