DDTD123TC-7-F

DDTD123TC-7-F

$0.21
  • Description:TRANS PREBIAS NPN 50V SOT23-3
  • Series:-

SKU:e3a3295bb2b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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DDTD123TC-7-F

Overview

The DDTD123TC-7-F is an NPN pre-biased surface-mount transistor manufactured by Diodes Incorporated. It features a built-in biasing resistor network consisting of R1 (2.2 kΩ) and an open circuit for R2, housed in an SOT-23 package. The device supports a maximum supply voltage of 50 V and a continuous collector current of 500 mA. Thermal characteristics include a power dissipation rating of 250 mW and a junction-to-ambient thermal resistance of 500 °C/W. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

  • Integrates internal biasing resistors to simplify circuit design and reduce component count.
  • Utilizes epitaxial planar die construction for reliable semiconductor performance.
  • Compliant with RoHS standards and free from halogen and antimony.

Applications

  • General-purpose switching applications requiring integrated base drive.
  • Driver circuits for low-power loads where space efficiency is critical.
  • Automotive electronics utilizing AEC-Q100 qualified variants.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm availability status and packaging details. Confirm that the selected variant meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component when a single NPN transistor with a 2.2 kΩ base resistor is required. Ensure the application current does not exceed the 500 mA limit and verify that the SOT-23 package dimensions fit the target PCB layout constraints.

Part Context

This part belongs to the DDTD series of NPN pre-biased transistors. It serves as a complementary counterpart to the DDTB series, which offers PNP configurations. Both series share similar mechanical footprints and electrical characteristics tailored for compact surface-mount designs.

Replacement Considerations

DDTD123EC-7-F

FAQ

What are the nominal values of the internal resistors?

The internal resistor R1 has a nominal value of 2.2 kΩ, while R2 is an open circuit.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at 500 mA.

Is this device suitable for high-frequency applications?

Yes, the device has a gain-bandwidth product (fT) of approximately 200 MHz under specified test conditions.

DDTD123TC-7-FDDTD123TC-7-F
$0.21
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