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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：470 Ohms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The DDTD142JC-7-F is an NPN pre-biased surface-mount transistor from Diodes Incorporated, housed in a SOT-23 package. It integrates built-in biasing resistors with nominal values of R1 = 0.47 kΩ and R2 = OPEN. The device features a collector-emitter breakdown voltage (BVCEO) of 40 V and a maximum continuous collector current (IC) of 500 mA. Power dissipation is rated at 250 mW with a thermal resistance (RθJA) of 500 °C/W. Operating temperature ranges from -55°C to +150°C. Electrical characteristics include a DC current transfer ratio (hFE) of 100–600 and a gain-bandwidth product (fT) of 200 MHz.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Integrated biasing resistors simplify circuit design
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free "Green" device
Applications
- General-purpose switching applications
- Driver circuits for low-power loads
- Logic interface level shifting
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental standards, including RoHS and halogen-free specifications, before finalizing procurement decisions for production runs.
Selection Notes
Select this component when an NPN pre-biased transistor with a 0.47 kΩ base resistor is required. Ensure the application voltage does not exceed the 40 V collector-emitter breakdown rating. Verify that the 500 mA current capacity and 250 mW power dissipation are sufficient for the intended load conditions.
Part Context
This part belongs to the DDTD series of NPN pre-biased transistors manufactured by Diodes Incorporated. The series offers complementary PNP types under the DDTB designation. These components are designed for surface-mount assembly and are commonly used in compact electronic designs requiring integrated biasing solutions.
Replacement Considerations
Check the DDTB series for complementary PNP equivalents. Verify pinout compatibility and electrical ratings against other SOT-23 pre-biased transistors from different manufacturers before substitution.
