SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTD142JU-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT323 package. It integrates internal biasing resistors with nominal values of R1 = 0.47 kΩ and R2 = 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current of 500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 56 and a typical gain-bandwidth product (fT) of 200 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental compliance standards for the intended application before finalizing procurement orders.
Select this component when an NPN digital transistor with a 0.47 kΩ base resistor and 10 kΩ emitter resistor is required. Ensure the operating voltage does not exceed 40 V and the load current remains within the 500 mA limit. Verify thermal dissipation requirements align with the specified junction-to-ambient resistance.
This part belongs to the DDTD series of NPN pre-biased transistors produced by Diodes Incorporated. It is designed as a complementary counterpart to PNP types within the same family, offering standardized electrical characteristics and mechanical dimensions for consistent integration into electronic designs.
Direct substitutes include other NPN pre-biased transistors with identical resistor ratios (R1=0.47kΩ, R2=10kΩ) and compatible SOT323 packages. Verify pinout compatibility and absolute maximum ratings before substitution.