ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS NPN 200MW SOT23-3
- Series：*
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
Download product information
Overview
The DDTD142TC-7 is an NPN pre-biased surface-mount transistor from Diodes Incorporated, housed in a SOT-23 package. It features built-in biasing resistors with R1 at 0.47 kΩ and an open R2 configuration. The device supports a maximum collector-emitter voltage (BVCEO) of 40 V and a continuous collector current of 500 mA. Electrical characteristics include a DC current transfer ratio (hFE) ranging from 100 to 600 at IC = 5 mA, and a gain-bandwidth product (fT) of 200 MHz. Power dissipation is rated at 250 mW, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Integrated biasing resistors simplify circuit design
- Totally lead-free and fully RoHS compliant
- Halogen and antimony-free green device
Applications
- General-purpose switching applications
- Driver circuits for low-power loads
- Logic level translation interfaces
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. The datasheet indicates that part numbers ending in TC may be listed as obsolete status. Confirm availability through authorized distributors or direct manufacturer channels to ensure compliance with current production statuses and quality standards.
Selection Notes
Select this component when an NPN pre-biased transistor with a 0.47 kΩ base resistor is required. Ensure the application voltage does not exceed the 40 V collector-emitter breakdown rating. Verify that the 500 mA current limit and 250 mW power dissipation are sufficient for the intended load conditions within the specified thermal environment.
Part Context
This component belongs to the DDTD series of NPN pre-biased transistors manufactured by Diodes Incorporated. It is designed as a complementary counterpart to PNP types within the same family. The device utilizes a standard SOT-23 surface-mount package, facilitating automated assembly and compact PCB layouts for modern electronic designs.
Replacement Considerations
Check the ordering information table for alternative part numbers within the same series. Note that similar variants like DDTD142JC-7-F feature different resistor configurations. Ensure any substitute matches the required electrical parameters and package dimensions.
FAQ
What is the nominal value of the internal base resistor (R1)?
The nominal value of the internal base resistor (R1) is 0.47 kΩ.
Is there an internal emitter resistor (R2) in this model?
No, the R2 configuration for the DDTD142TC model is open.
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (BVCEO) is 40 V.
