DDTD142TU-7-F

Overview

The DDTD142TU-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It integrates a single built-in bias resistor (R1) with a nominal value of 0.47 kΩ, while the second resistor position remains open. The device supports a maximum collector-emitter breakdown voltage (BVCEO) of 40 V and a continuous collector current of 500 mA. It operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 250 mW at 25°C ambient temperature.

Feature Summary

• Integrates a single built-in bias resistor for simplified circuit design
• NPN configuration optimized for high-speed switching applications
• Totally lead-free and fully RoHS compliant construction

Applications

• General-purpose switching circuits
• Driver stages for relays and solenoids
• Logic level translation interfaces

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required electrical characteristics and packaging format. Review the manufacturer's datasheet for handling precautions and storage conditions prior to assembly.

Selection Notes

Select this component when a compact NPN solution with integrated base resistance is required. Ensure the 40 V collector-emitter voltage rating exceeds the maximum circuit supply voltage. Verify that the 500 mA output current capability aligns with the load requirements of the target application.

Part Context

This part belongs to the DDTD series of NPN pre-biased transistors from Diodes Incorporated. It shares the same physical footprint as complementary PNP types but differs in internal resistor configurations and polarity. The series is designed to replace discrete resistor-transistor networks in space-constrained designs.

Replacement Considerations

DDTD142JU-7-F: Active status; includes R2 (10kΩ). DDTB142TU-7-F: Complementary PNP type.