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Product Detailed Parameters
- Description：IGBT MODULE 1700V 6250W
- Series：PrimePACK™3
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 1000A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：-
- Power - Max：6250 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：81 nF @ 25 V
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Overview
The DF1000R17IE4BOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4-E4 technology. It features a 1700 V collector-emitter breakdown voltage and a continuous collector current of 1000 A at 25°C. The saturation voltage is typically 2.45 V at 15 V gate drive and 1000 A. Maximum power dissipation reaches 6250 W. Operating temperature spans -40°C to +150°C. The component uses PrimePACK 3 packaging with screw mount installation.
Feature Summary
- Integrates Trenchstop IGBT4-E4 technology for optimized switching performance
- Includes an integrated NTC thermistor for precise junction temperature monitoring
- Utilizes PrimePACK 3 housing for robust mechanical stability and thermal management
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the exact part number against official Infineon documentation before procurement. Confirm that the suffix BOSA1 corresponds to the required RoHS compliance and specific manufacturing batch requirements. Ensure compatibility with existing PrimePACK 3 mounting hardware and thermal interface materials during integration planning.
Selection Notes
Select this module for applications requiring high current handling up to 1000 A and robust voltage blocking at 1700 V. Consider the 6250 W power dissipation capability when designing heat sink solutions. Verify that the system operates within the specified -40°C to +150°C junction temperature range to ensure long-term reliability and optimal electrical characteristics.
Part Context
This component belongs to the FF/DF series of industrial IGBT modules. It shares the PrimePACK 3 form factor with similar high-power devices like the FF1000R17IE4. The 'D' prefix typically indicates a dual configuration, distinguishing it from half-bridge variants in the same voltage and current class.
Replacement Considerations
Direct substitutes include other Infineon Dual IGBT modules in the PrimePACK 3 package with matching 1700 V and 1000 A ratings, such as the FF1000R17IE4BOSA1. Verify pinout compatibility and thermal resistance specifications before substitution.
