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The DF1000R17IE4PBPSA1 is a PrimePACK™3 half-bridge IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a pre-applied thermal interface material and an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 1700 V, with a continuous DC collector current (ICDC) of 1000 A at TH = 60°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) reaches 2000 A for 1 ms pulses. At Tvj = 25°C, the typical VCEsat is 2.00 V, while the diode forward voltage (VF) is 1.85 V. The operating junction temperature range extends from -40°C to 150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches project requirements. Check for RoHS compliance status and ensure storage conditions adhere to guidelines for modules containing pre-applied thermal interface materials. Validate that the package dimensions align with the mechanical layout specifications before finalizing procurement orders.
Select this module for designs requiring high current density and robust thermal cycling performance. Ensure gate drive circuits accommodate the specified internal gate resistance and charge requirements. Verify that the cooling system maintains the baseplate temperature below the maximum limit of 125°C. Account for the module weight and mounting torque specifications during mechanical integration planning.
This component belongs to the PrimePACK™3 series, designed for industrial power electronics. It integrates Trench/Fieldstop IGBT4 technology with Emitter Controlled Diodes. The module includes an NTC thermistor for thermal monitoring and utilizes a copper base plate for efficient heat dissipation. It represents a standardized housing solution for high-power semiconductor applications.
DF1000R17IE4D_B2