SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DF120R12W2H3B27BOMA1 is a High Speed IGBT H3 module with a 1200 V collector-emitter voltage and a nominal continuous DC collector current of 40 A at TC = 75°C. It features an integrated NTC thermistor rated at 5 kΩ at 25°C. The module utilizes PressFIT contact technology and includes two inverse-polarity protection diodes (A and B) alongside the main IGBT-chopper and Diode-chopper. Electrical characteristics include a maximum repetitive peak reverse voltage of 1200 V for all components, a surge forward current capability up to 360 A, and a total power dissipation of 180 W at TC = 25°C.
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that the procurement channel provides valid traceability and authenticity certificates. Confirm compliance with RoHS directives and UL approval standards before finalizing orders. Cross-reference datasheet revision numbers to ensure alignment with current manufacturing specifications.
Select this component based on its 1200 V blocking capability and 40 A nominal current rating. Evaluate the thermal resistance values to determine appropriate heatsinking requirements. Consider the low stray inductance design for high-frequency switching efficiency. Verify that the operating junction temperature range meets the application's environmental demands.
This module belongs to the EasyPACK family from Infineon Technologies. It is designed for compact power conversion systems requiring high reliability. The series integrates advanced silicon technologies to minimize switching losses while maintaining robust short-circuit withstand capabilities.
Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement modules match the pinout, thermal resistance, and electrical ratings. Verify compatibility with existing gate driver circuits and mechanical mounting constraints.