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The DF1400R12IP4D is a PrimePACK™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an enlarged Emitter Controlled 4 diode. It provides a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 1400 A at TC = 100°C with a maximum junction temperature of 175°C. The repetitive peak collector current (ICRM) reaches 2800 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.75 V, while the diode forward voltage (VF) is 1.65 V. Total power dissipation is rated at 7.70 kW at TC = 25°C. The module includes an integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the component meets all relevant safety standards and insulation requirements for the intended application environment before finalizing procurement decisions.
Select this module for high-power chopper circuits requiring robust short-circuit handling and extended temperature tolerance. Consider the 19.5 K/kW thermal resistance per IGBT when designing heatsinking solutions. Verify gate drive compatibility with the specified internal gate resistor and threshold voltages.
This component belongs to the Infineon PrimePACK™3 series, designed for high-power density applications. It utilizes IGBT4 technology combined with an enlarged diode structure to optimize switching performance and conduction losses in demanding industrial and traction environments.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains compatible package dimensions, pinout configurations, and electrical ratings such as VCES and IC nom.