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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 25A
- Series：EasyPACK™, CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：25A
- Rds On (Max) @ Id, Vgs：32.3mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id：5.15V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：74nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The DF16MR12W1M1HFB67BPSA1 is a CoolSiC™ booster module featuring a 1200 V drain-source voltage and a continuous DC drain current of 25 A. It utilizes PressFIT contact technology for secure mounting and includes an integrated NTC temperature sensor with a rated resistance of 5 kΩ at 25 °C. The module incorporates low inductive design characteristics, achieving a stray inductance of 10 nH. It is qualified for industrial applications according to IEC standards.
Feature Summary
- Utilizes CoolSiC™ Trench MOSFET technology for high switching performance
- Features PressFIT contact technology for robust mechanical connection
- Includes an integrated NTC thermistor for precise thermal monitoring
- Designed with low stray inductance to minimize switching losses
Applications
- Solar power inverters
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific ordering suffix B67 against official Infineon documentation to confirm the exact package variant and terminal configuration. Ensure that the selected gate drive voltages align with the recommended operating conditions specified in the datasheet to maintain device reliability and prevent overstress during operation.
Selection Notes
Select this component when designing systems requiring high efficiency and compact form factors. The integrated NTC sensor facilitates accurate thermal management without external components. Consider the maximum junction temperature limits and the required heatsinking capabilities to ensure the module operates within its safe operating area under all expected load conditions.
Part Context
This part belongs to the EasyPACK™ family of discrete semiconductor modules from Infineon Technologies. It is designed as a booster stage within larger power conversion topologies. The M1H series designation indicates the use of advanced silicon carbide trench MOSFET technology, offering improved thermal conductivity and switching speed compared to traditional silicon devices.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current handling capabilities, and physical footprint dimensions.
