DF17MR12W1M1HFB68BPSA1

DF17MR12W1M1HFB68BPSA1

$58.71
  • Description:LOW POWER EASY
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:51df988c79a0 Category: Brand:

  
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Product Detailed Parameters

  • Description:LOW POWER EASY
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Tray
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):15V, 18V
  • Rds On (Max) @ Id, Vgs:16.2mOhm @ 50A, 18V
  • Vgs(th) (Max) @ Id:5.15V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs:149 nC @ 18 V
  • Vgs (Max):+20V, -7V
  • Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:-
  • Package / Case:Module

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DF17MR12W1M1HFB68BPSA1

Overview

The DF17MR12W1M1HFB68BPSA1 is a CoolSiC™ Trench MOSFET booster module in the EasyPACK™ AG-EASY1B package. It features a 1200 V drain-source voltage and a nominal current of 50 A with a repetitive peak current of 100 A. The module integrates an NTC temperature sensor and utilizes PressFIT contact technology. Key electrical parameters include a maximum on-resistance of 34.7 mΩ at 175 °C, a gate threshold voltage of 5.15 V, and a total gate charge of 0.149 µC. Stray inductance is limited to 10 nH.

Feature Summary

  • Integrates CoolSiC™ Trench MOSFETs with low inductive design for high current density.
  • Utilizes PressFIT contact technology combined with integrated mounting clamps for rugged installation.
  • Includes an embedded NTC thermistor for precise thermal monitoring.
  • Validated for industrial applications according to IEC 60747, 60749, and 60068 standards.

Applications

  • Solar power inverters
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix B68 against official Infineon documentation to confirm the exact mechanical variant and terminal configuration. Ensure that the selected gate drive voltages align with the recommended operating ranges specified in the datasheet to maintain device reliability and performance over the intended operational lifetime.

Selection Notes

Select this component for designs requiring high switching frequencies and robust thermal management within solar or industrial environments. Evaluate the thermal resistance from junction to heat sink alongside the system's cooling capabilities. Confirm compatibility with the PressFIT assembly process and verify that the stray inductance specifications meet the electromagnetic interference requirements of the target application.

Part Context

This module belongs to the EasyPACK™ family of silicon carbide power modules manufactured by Infineon Technologies. It represents a specialized solution for high-power conversion systems, combining advanced semiconductor materials with efficient packaging technologies. The product line focuses on delivering high efficiency and reliability for demanding energy conversion applications.

Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Cross-reference technical specifications such as voltage ratings, current capacities, and package dimensions before considering alternative part numbers.

FAQ

What is the purpose of the integrated NTC thermistor?

The integrated NTC thermistor provides real-time temperature monitoring of the module, allowing for precise thermal management and protection against overheating during operation.

How does the PressFIT technology benefit the module installation?

PressFIT contact technology enables secure, solderless connections that reduce assembly time and improve long-term reliability by eliminating potential failure points associated with traditional soldering methods.

What are the recommended gate-source voltage settings?

The recommended on-state gate voltage is between 15 V and 18 V, while the off-state gate voltage should be set between -5 V and 0 V for optimal performance and device longevity.

DF17MR12W1M1HFB68BPSA1DF17MR12W1M1HFB68BPSA1
$58.71
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