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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1040W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：1040 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The DF200R12KE3HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 200 A at 25°C, with a repetitive peak current capability of 400 A. The device has a typical saturation voltage of 1.7 V at 200 A and 25°C. Total power dissipation reaches 1040 W. Thermal resistance from junction to case is 0.12 K/W for the transistor and 0.15 K/W for the diode. The module operates within a temperature range of -40°C to +125°C.
Feature Summary
- Dual configuration integrating an IGBT switch and a free-wheeling diode in one package.
- Incorporates Trenchstop technology for optimized switching performance and low conduction losses.
- Features high short-circuit withstand capability up to 800 A for robust operation.
Applications
- High-power industrial motor drives
- Medium-voltage AC and DC drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging and terminal configuration. Confirm that the component meets RoHS compliance requirements for your region. Cross-reference the datasheet revision number to validate electrical parameters before integration into production designs.
Selection Notes
Select this module based on its 1200V rating and 200A continuous current capacity. Evaluate thermal management needs using the specified junction-to-case thermal resistance values. Ensure gate drive circuits can handle the required ±15V swing and manage the total gate charge effectively during switching transitions.
Part Context
This component belongs to the EconoPACK family of modules designed for compact power electronics. It utilizes silicon-based IGBT technology combined with fast recovery diodes. The design targets high reliability and ease of mounting in standard industrial power conversion architectures.
Replacement Considerations
Direct substitutes include the FF200R12KE3 and DF200R12KE3 variants. Verify pinout compatibility and thermal interface dimensions when considering these alternatives for existing board layouts.
FAQ
What is the maximum short-circuit current rating?
The module supports a short-circuit current of 800 A for pulse durations up to 10 µs.
What is the recommended gate resistor value for switching tests?
Typical switching loss data is provided for a gate resistor (RG) of 3.6 Ω.
Does the module include an integrated NTC thermistor?
No, the DF200R12KE3HOSA1 does not feature an integrated NTC thermistor; external thermal monitoring is required.
