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The DF200R12PT4B6BOSA1 is a silicon IGBT module from Infineon Technologies, utilizing Trench Field Stop technology. It features a three-phase inverter configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 300 A at 25°C. The device has a saturation voltage of 1.75 V and a power dissipation rating of 1100 W. It operates within a junction temperature range of -40°C to +150°C. The module employs chassis mounting and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific ordering suffix against official Infineon documentation to ensure correct technical specifications. Confirm that the component matches the required electrical ratings and package type for your design. Cross-reference the manufacturer part number with authorized distributors to validate authenticity. Ensure compatibility with your thermal management and gate drive requirements before finalizing procurement.
Select this module for applications requiring a three-phase topology with high current handling capabilities. Consider the 1200 V blocking voltage and 300 A current rating for suitable power levels. Evaluate the need for integrated thermal sensing via the NTC thermistor. Compare power dissipation limits against your cooling system capacity to ensure reliable operation under load conditions.
This component belongs to Infineon's Trench Field Stop IGBT module family. It is designed for industrial power electronics applications. The EconoPACK or similar press-fit/chassis mount form factor facilitates efficient heat transfer. It represents a standard solution for medium-power inversion tasks.
FS200R12PT4PBOSA1