DF400R12KE3HOSA1

Overview

The DF400R12KE3HOSA1 is a 62mm C-series IGBT module featuring Trench/Feldstop IGBT3 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage of 1200 V, with continuous DC collector currents of 400 A at TC=80°C and 580 A at TC=25°C. The total power dissipation is 2000 W at TC=25°C. Key electrical parameters include a maximum repetitive peak collector current of 800 A, gate-emitter peak voltage of +/-20 V, and typical saturation voltages of 1.70 V to 2.15 V. Thermal resistance from junction to case is 0.062 K/W for the IGBT and 0.11 K/W for the diode.

Feature Summary

• Incorporates Trench/Feldstop IGBT3 technology combined with an Emitter Controlled Diode for optimized switching performance.
• Features a robust 62mm C-series housing constructed with a copper baseplate and aluminum oxide internal insulation.
• Designed for high reliability with specified short-circuit capability up to 1600 A for durations not exceeding 10 µs.

Applications

• Brake chopper circuits in industrial drive systems
• High-power motor control applications requiring robust switching elements
• Industrial equipment utilizing 62mm form factor modules

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and verify isolation test voltage ratings suitable for the intended operational environment before finalizing procurement.

Selection Notes

Select this module based on its 1200 V blocking capability and 400 A to 580 A current handling depending on thermal conditions. Evaluate the thermal resistance values (0.062 K/W for IGBT) to ensure adequate heatsinking. Consider the 20 nH stray inductance for circuit layout optimization and verify that the operating temperature range fits within -40°C to 125°C.

Part Context

This component belongs to Infineon's 62mm C-series lineup, which utilizes advanced IGBT3 trench/field-stop technology. The series is engineered for industrial applications demanding high power density and reliability. The module integrates both the switching element and the freewheeling diode into a single screw-mount package for simplified assembly.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits and thermal management solutions if considering alternative models from the same or different manufacturers.

FAQ

What is the maximum short-circuit current rating?

The module supports a short-circuit current of 1600 A for pulse durations up to 10 µs at Tvj = 125°C.

What is the isolation test voltage?

The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.

What material is used for the module baseplate?

The module baseplate is made of Copper (Cu).