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The DF650R17IE4BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4-E4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 650 A at TC = 100°C. The module includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25°C. Electrical characteristics include a typical collector-emitter saturation voltage (VCEsat) of 2.00 V at Tvj = 25°C and a forward voltage (VF) of 1.85 V for the diode at 25°C. Thermal resistance from junction to case is 36.0 K/kW per IGBT and 71.5 K/kW per diode.
Verify the specific ordering suffix BOSA1 against official documentation to confirm package type and internal configuration details. Ensure compatibility with PrimePACK2 mounting standards and thermal interface requirements. Cross-reference datasheet revision 2.2 for accurate electrical parameters before finalizing procurement specifications.
Select this component for high-power industrial applications requiring robust chopper or inverter capabilities. Evaluate thermal management needs based on the specified junction-to-case resistance values. Confirm that the 1700 V rating aligns with system voltage levels and that the 650 A current capacity meets peak load demands without exceeding safe operating area limits.
This module belongs to the PrimePACK2 series, designed for high reliability in demanding environments. It incorporates Trenchstop IGBT4-E4 technology to optimize switching performance and conduction losses. The standard housing provides high creepage and clearance distances, ensuring safety in high-voltage installations.
FF650R17IE4P
The maximum repetitive peak collector current (ICRM) is 1300 A for a pulse duration of 1 ms.
The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for 1 minute.
The typical gate charge (QG) is 7.00 µC when measured between -15 V and +15 V.