DF80R12W2H3B11BOMA1

DF80R12W2H3B11BOMA1

$30.37
  • Description:IGBT MODULE
  • Series:-

SKU:f4645a6a3b7a Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IGBT MODULE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Dual Boost Chopper
  • Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 20A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:190 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:2.35 nF @ 25 V

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DF80R12W2H3B11BOMA1

Overview

The DF80R12W2H3B11BOMA1 is a single-phase bridge rectifier module manufactured by Infineon Technologies. It utilizes silicon carbide (SiC) technology to achieve high-performance power conversion. The device features a peak reverse voltage of 1.2 kV and supports an average rectified current of 50 A. It employs a press-fit mounting style within the EasyPACK package format. The module operates reliably across a temperature range from -40°C to +150°C junction temperature, ensuring stability in demanding thermal environments.

Feature Summary

  • Utilizes silicon carbide semiconductor technology for enhanced efficiency and thermal performance.
  • Integrates four diodes into a single-phase bridge configuration for compact circuit design.
  • Features a press-fit installation method to ensure robust mechanical connection and low contact resistance.

Applications

  • High-frequency AC-DC power supplies
  • Induction heating systems
  • Solar inverters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical characteristics and packaging details. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Ensure that the press-fit mounting requirements are compatible with the target PCB or busbar design specifications.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with moderate current handling in a compact form factor. The SiC material choice is suitable for applications prioritizing reduced switching losses and higher operating temperatures compared to standard silicon alternatives. Evaluate thermal management needs based on the specified junction temperature limits.

Part Context

This part belongs to Infineon's CoolSiC portfolio, specifically designed for power electronics applications. It represents a transition towards wider bandgap semiconductors in industrial power modules. The EasyPACK series provides standardized dimensions for easy integration into existing converter platforms.

Replacement Considerations

Direct substitutes may include other single-phase SiC bridge modules from Infineon with similar voltage and current ratings. Verify pin compatibility and thermal interface requirements when considering alternative manufacturers' offerings.

DF80R12W2H3B11BOMA1DF80R12W2H3B11BOMA1
$30.37
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