DGTD65T50S1PT

DGTD65T50S1PT

  • Description:IGBT FIELD STOP 650V 100A TO-247
  • Series:-

SKU:53db8b488d63 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT FIELD STOP 650V 100A TO-247
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tube
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 50A
  • Power - Max:375 W
  • Switching Energy:770µJ (on), 550µJ (off)
  • Input Type:Standard
  • Gate Charge:287 nC
  • Td (on/off) @ 25°C:58ns/328ns
  • Test Condition:400V, 50A, 7.9Ohm, 15V
  • Reverse Recovery Time (trr):80 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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DGTD65T50S1PT

Overview

The DGTD65T50S1PT is a 650V Field Stop IGBT manufactured by Diodes Incorporated, housed in a TO-247 package. It features a maximum collector current of 100A and a pulsed collector current of 200A. The device exhibits a saturation voltage of 1.85V at 50A and a typical reverse recovery time of 80ns at a di/dt of 1000A/μs. Power dissipation is rated at 375W.

Feature Summary

  • Field stop technology for high-speed switching
  • Low power loss characteristics
  • High input impedance

Applications

  • Industrial motor drives
  • Power supplies
  • Inverter circuits

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary markets. Ensure the TO-247 package type matches the target PCB footprint. Check RoHS compliance documentation for regulatory requirements. Validate datasheet revisions against design specifications.

Selection Notes

Select this IGBT for applications requiring 650V blocking capability and moderate current handling up to 100A continuous. Consider the 1.85V saturation voltage for efficiency calculations at 50A loads. Evaluate thermal management needs based on the 375W power dissipation rating. Assess switching speed requirements against the 80ns reverse recovery time specification.

Part Context

This component belongs to Diodes Incorporated's single IGBT product line. It utilizes field stop architecture to optimize switching performance. The TO-247 package provides robust mechanical stability and thermal conductivity for through-hole mounting. It serves as a discrete switching element in medium-power electronic systems.

Replacement Considerations

No public confirmed substitute part numbers are available. The component is listed as inactive. Designers must evaluate alternative IGBTs with matching voltage, current, and package specifications from other manufacturers or updated series within the same brand.

FAQ

What is the typical reverse recovery time?

The typical reverse recovery time is 80ns measured at a di/dt of 1000A/μs.

What is the collector-emitter saturation voltage?

The VCE(sat) is 1.85V when the collector current is 50A.

DGTD65T50S1PTDGTD65T50S1PT

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