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The DGTD65T60S2PT is a single IGBT manufactured by Diodes Incorporated, utilizing Field Stop technology. It features a collector-emitter voltage of 650V and a DC collector current rating of 60A. The device operates with a gate-emitter voltage range of -20V to +20V and exhibits a saturated collector-emitter voltage between 1.85V and 2.4V. Designed for through-hole mounting in the TO-247 package, it supports a power dissipation capacity of 214W.
Verify the specific datasheet revision (DS39669 Rev. 1) against your design requirements to ensure compatibility with voltage and current ratings. Confirm that the TO-247 package dimensions match your PCB footprint and thermal management strategy. Check for any recent product change notices regarding manufacturing sites or material composition updates.
Select this component when a 650V blocking capability and 60A continuous current are required in a single-chip solution. The Field Stop architecture offers advantages in switching speed compared to standard IGBTs. Ensure the application can accommodate the specified gate voltage limits and that the TO-247 form factor fits the mechanical constraints of the assembly.
This part belongs to Diodes Incorporated's discrete transistor portfolio, specifically within their IGBT segment. It complements other high-voltage power devices offered by the manufacturer for automotive and industrial markets. The DGTD series represents advanced trench technologies designed to improve efficiency in power electronics systems.
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other 650V, 60A TO-247 IGBTs only after verifying pinout compatibility and electrical parameter margins.