DI002N10PWK

DI002N10PWK

$0.41
  • Description:DI002N10PWK
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:c2854907327a Category: Brand:

  
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Product Detailed Parameters

  • Description:DI002N10PWK
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:250mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.4 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:454 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-QFN (2x2)
  • Package / Case:6-PowerUDFN

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DI002N10PWK

Overview

The DI002N10PWK is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of 100 V and continuous Drain current (ID) of 2 A at 25°C. The device has a maximum power dissipation (PD) of 2.0 W and a low on-state resistance (RDS(on)) of less than 250 mΩ at VGS = 10 V and ID = 2 A. It supports a junction temperature range of -55°C to +150°C.

Feature Summary

  • Tiny, space-saving QFN2x2 package with low profile height
  • Low on-state resistance for efficient power handling
  • Fast switching times and low gate charge
  • Compliant with RoHS standards without exemptions

Applications

  • Power Management Units
  • Battery powered devices
  • DC-DC Converters
  • Load Switches

Procurement Notes

Verify the specific suffix requirements for your application. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the QFN2x2 package dimensions and thermal characteristics align with your PCB layout and heat dissipation capabilities before finalizing procurement.

Selection Notes

Select this component for applications requiring compact form factors and moderate current handling up to 2 A. Ensure the design accommodates the 645 mm² copper pad requirement for optimal thermal performance. Consider the -Q or -AQ suffixes if automotive-grade reliability or qualification is necessary for the target environment.

Part Context

This part belongs to Diotec's discrete semiconductor portfolio, specifically within their N-Channel Power MOSFET line. It is designed for modern electronics where space constraints are critical. The QFN2x2 package allows for high-density mounting on printed circuit boards, making it suitable for portable and miniaturized electronic systems.

Replacement Considerations

Check for direct substitutes with identical pinouts and electrical ratings. Verify that any replacement maintains the same RDS(on) limits and VDSS specifications. Ensure the alternative package matches the QFN2x2 footprint to avoid PCB redesign.

DI002N10PWKDI002N10PWK
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