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The DI002N10PWK is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of 100 V and continuous Drain current (ID) of 2 A at 25°C. The device has a maximum power dissipation (PD) of 2.0 W and a low on-state resistance (RDS(on)) of less than 250 mΩ at VGS = 10 V and ID = 2 A. It supports a junction temperature range of -55°C to +150°C.
Verify the specific suffix requirements for your application. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the QFN2x2 package dimensions and thermal characteristics align with your PCB layout and heat dissipation capabilities before finalizing procurement.
Select this component for applications requiring compact form factors and moderate current handling up to 2 A. Ensure the design accommodates the 645 mm² copper pad requirement for optimal thermal performance. Consider the -Q or -AQ suffixes if automotive-grade reliability or qualification is necessary for the target environment.
This part belongs to Diotec's discrete semiconductor portfolio, specifically within their N-Channel Power MOSFET line. It is designed for modern electronics where space constraints are critical. The QFN2x2 package allows for high-density mounting on printed circuit boards, making it suitable for portable and miniaturized electronic systems.
Check for direct substitutes with identical pinouts and electrical ratings. Verify that any replacement maintains the same RDS(on) limits and VDSS specifications. Ensure the alternative package matches the QFN2x2 footprint to avoid PCB redesign.