DI004N06PWK

$0.09

Description：DI004N06PWK
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:4928f43bbc00 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI004N06PWK
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：57mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 0 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：651 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.65W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-QFN (2x2)
Package / Case：6-PowerUDFN

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DI004N06PWK

Overview

The DI004N06PWK is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of 60 V and continuous Drain current (ID) of 4.0 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 57 mΩ at VGS = 10 V and ID = 4 A. Maximum power dissipation (PD) is 1.65 W at 25°C, with a junction temperature range of -55°C to +150°C.

Feature Summary

Tiny, space-saving QFN2x2 package with low profile height
Low on-state resistance for efficient power handling
Fast switching times and low gate charge
Compliant to RoHS standards without exemptions

Applications

Power Management Units
Battery powered devices
DC-DC Converters
Load Switches

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes parts undergoing AEC-Q101 qualification. Confirm these details match your design requirements before procurement.

Selection Notes

Select this component for applications requiring compact footprints and high efficiency. The low RDS(on) minimizes conduction losses. Ensure thermal management aligns with the specified RthJA of 76 K/W on a PCB with a 645 mm² copper pad. Verify voltage and current ratings against peak operational loads.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for modern electronics. It utilizes a lead-free, halogen-free construction. The QFN2x2 case material is UL 94V-0 rated. The product is manufactured by Diotec Semiconductor AG, a provider of semiconductor solutions since 1973.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

What is the maximum Drain-Source breakdown voltage?

The Drain-Source breakdown voltage (V(BR)DSS) is 60 V.

Does this component support automotive applications?

Standard versions are for commercial/industrial use. Versions with the -Q suffix are AEC-Q101 compliant, and -AQ suffixes indicate qualification in progress.