DI005P04PW-AQ

$0.15

Description：MOSFET POWERQFN 2X2 P -40V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:3c96372e476c Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 2X2 P -40V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1078 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：6-QFN (2x2)
Package / Case：6-PowerUDFN

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DI005P04PW-AQ

Overview

The DI005P04PW-AQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN2x2 package. It features a drain-source voltage (VDSS) of -40 V and a continuous drain current (-ID) of 6 A at 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 40 mΩ at VGS = 10 V and 55 mΩ at VGS = 4.5 V. With a power dissipation (PD) of 2 W and a junction temperature range up to 150°C, it supports avalanche energy ratings of 33 mJ. The suffix -AQ indicates the component is currently undergoing AEC-Q101 qualification.

Feature Summary

Low profile, space-saving QFN2x2 package design
Avalanche rated for robust operation under transient conditions
Fast switching times with low gate charge characteristics
Compliant with RoHS standards without exemptions

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify that the specific order includes the -AQ suffix to confirm alignment with automotive qualification requirements. Confirm final AEC-Q101 certification status directly with Diotec Semiconductor prior to integration into safety-critical designs. Ensure PCB layout accommodates the QFN2x2 footprint with appropriate copper pad dimensions for thermal management.

Selection Notes

Select this component for applications requiring compact P-Channel MOSFET solutions with low on-state resistance. Evaluate thermal performance based on the specified RthJA of 62.5 K/W and ensure adequate copper area for heat dissipation. Consider the 40 V rating and 6 A continuous current limits when designing circuits to prevent exceeding maximum ratings during peak load operations.

Part Context

This part belongs to Diotec's P-Channel Power MOSFET lineup, designed for commercial and industrial grade applications. The product line emphasizes efficiency through low RDS(on) and fast switching capabilities. The DI005P04PW variant specifically targets space-constrained environments while maintaining high reliability standards for general-purpose power switching tasks.