DI008N09SQ

$0.78

Description：MOSFET SO8 90V 8A 0.075OHM 150C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b3a491208572 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET SO8 90V 8A 0.075OHM 150C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：8A
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：2W
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DI008N09SQ

Overview

The DI008N09SQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact SO-8 package. It features a Drain-Source voltage (VDSS) of 90 V and a continuous Drain current (ID) of 8 A at 25°C. The device utilizes Power Trench Technology to achieve a low on-state resistance (RDS(on)) of less than 75 mΩ. Key electrical parameters include a maximum Gate-Source voltage (VGSS) of ±20 V, a peak Drain current (IDM) of 23 A, and a single pulse avalanche energy (EAS) of 3.2 mJ. Thermal characteristics specify a junction temperature range of -55°C to +150°C and a power dissipation (PD) of 2.0 W.

Feature Summary

Utilizes Power Trench Technology for enhanced performance
Features a tiny, space-saving SO-8 package design
Provides fast switching times with low gate charge
Compliant with RoHS standards without exemptions

Applications

Power Management Units
Battery powered devices
Load Switches and Polarity Protection
DC/DC Converters

Procurement Notes

Verify the specific suffix designation when ordering. The standard version represents commercial or industrial grade components. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes parts currently undergoing automotive qualification. Confirm that the required reliability grade matches the application's operational environment before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high current density within a small footprint. The SO-8 case allows for efficient thermal management via four drain terminals. Ensure the circuit operates within the specified 90 V breakdown limit and respects the 2.0 W power dissipation rating under defined PCB copper pad conditions. Evaluate the 65 mΩ typical RDS(on) against efficiency requirements for load switching applications.

Part Context

This part belongs to Diotec Semiconductor's portfolio of discrete semiconductors, specifically within the N-Channel Power MOSFET category. The manufacturer produces these components using silicon technology. The DI008N09SQ is designed for standard commercial and industrial applications, offering a balance between switching speed and conduction losses suitable for modern electronic circuits.