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The DI015N25D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor in a TO-252AA (DPAK) package. It features a drain-source voltage of 250 V and a continuous drain current of 15 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 255 mΩ at 10 V gate drive. Key electrical parameters include a total gate charge of 8.9 nC, input capacitance of 475 pF, and a power dissipation rating of 140 W. The component supports a junction temperature range from -55°C to +175°C and is rated for 80 mJ single pulse avalanche energy.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the commercial/industrial grade specification aligns with the target application reliability requirements. Check for RoHS compliance status and REACH restrictions relevant to the procurement region. Ensure the requested quantity matches standard reel sizes or cut tape availability.
Select this component when a 250 V breakdown voltage and moderate current handling are required in a compact surface-mount form factor. Evaluate thermal management needs based on the 140 W dissipation limit measured at the heat flange. Consider the 8.9 nC gate charge for driving circuit compatibility. Verify that the operating environment stays within the specified -55°C to +175°C junction temperature range.
This part belongs to Diotec Semiconductor's standard N-Channel Power MOSFET lineup utilizing Advanced Trench Technology. It is designed for general-purpose commercial and industrial applications requiring reliable switching performance. The device is distinct from automotive-grade variants, which carry separate qualification designations.
For automotive applications requiring AEC-Q101 compliance, refer to the DI014N25D1-Q or DI014N25D1-AQ versions as documented substitutes.
No, the DI015N25D1 is designated for commercial and industrial grade applications. Automotive versions are available under the DI014N25D1-Q/-AQ designations.
The device is rated for 80 mJ of single pulse avalanche energy under test conditions of VDD = 30 V, VG = 10 V, L = 0.5 mH, and RG = 25 Ω.