DI017N06PQ-AQ

$0.67

Description：MOSFET POWERQFN 5X6 N 60V
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f26d0a28b94f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 60V
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：17A
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：21W
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerQFN 5x6
Package / Case：-

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DI017N06PQ-AQ

Overview

The DI017N06PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 17 A at 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 33 mΩ at VGS = 4.5 V. It supports a power dissipation (PD) of 21 W and operates within a junction temperature range of -55°C to +175°C. The component is avalanche rated with a single pulse avalanche energy (EAS) of 3.7 mJ.

Feature Summary

Low profile, space-saving package design
Avalanche rated capability
Fast switching times
Low gate charge

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix for the required qualification level. The standard version is commercial/industrial grade. The suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the selected variant meets the reliability standards necessary for the intended application environment before finalizing procurement.

Selection Notes

Select this component for applications requiring a compact footprint and robust performance in low-voltage environments. The 60V rating and 17A current capacity suit various power management tasks. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the logic-level gate drive requirements align with the control circuitry capabilities.

Part Context

This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs by Diotec Semiconductor. These devices are characterized by low on-state resistance and fast switching speeds. They are designed for use in commercial, industrial, and automotive applications where space efficiency and high reliability are critical factors in system design.