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The DI017N10D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-Pak) package. It features a drain-source voltage of 100 V and a continuous drain current of 17 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 105 mΩ at VGS = 10 V and ID = 10 A. With a power dissipation rating of 79 W and a junction temperature range up to 175°C, it supports high-efficiency switching applications.
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm thermal management requirements as ratings depend on case temperature conditions specified in the datasheet.
Select this component for circuits requiring 100 V blocking voltage and moderate current handling. Ensure adequate heat sinking to maintain the case temperature within limits for the 17 A rating. Consider avalanche energy specifications if inductive load switching is present.
This part belongs to Diotec's discrete semiconductor portfolio, specifically the N-Channel Power MOSFET category. It utilizes a D-Pak surface-mount package suitable for automated assembly. The product line targets general industrial and consumer electronics power management solutions.
Consult official distributor databases for cross-reference data. Verify pinout compatibility and electrical parameter margins before substituting with other manufacturers' equivalents.