DI017P03PT2-AQ

DI017P03PT2-AQ

$0.30
  • Description:MOSFET 2P-CH 30V 17A 8QFN
  • Series:-

SKU:747c5e9c6189 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 17A 8QFN
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1150pF @ 20V
  • Power - Max:13.1W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:8-QFN (3x3)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DI017P03PT2-AQ

Overview

The DI017P03PT2-AQ is a dual P-channel power MOSFET from Diotec Semiconductor, housed in a QFN3x3 package. It features a drain-source voltage (VDSS) of -30 V and a continuous drain current (ID) of -17 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 30 mΩ at VGS = 4.5 V and ID = 5 A. With a maximum junction temperature (Tjmax) of 175°C and a power dissipation (PD) of 13.1 W, it supports high thermal performance. The component is compliant with the AEC-Q101 standard.

Feature Summary

  • Logic level gate drive capability for efficient control
  • Compact QFN3x3 package design for space-constrained applications
  • Low on-state resistance to minimize conduction losses
  • Fast switching times and low gate charge for dynamic efficiency

Applications

  • Power management units
  • Battery powered devices
  • Load switches and polarity protection circuits

Procurement Notes

Verify the specific ordering suffix when procuring. The '-AQ' suffix indicates the component is currently undergoing AEC-Q101 qualification, whereas the '-Q' suffix denotes full compliance. Confirm the exact status required for your supply chain needs directly with the manufacturer or authorized distributors before finalizing orders.

Selection Notes

Select this component for designs requiring dual P-channel isolation in a minimal footprint. Ensure the PCB layout provides adequate copper area on the drain terminals to manage the thermal resistance effectively. Verify that the logic levels of the driving circuitry align with the specified gate-source threshold voltages for reliable switching operation.

Part Context

This part belongs to Diotec's automotive-grade discrete semiconductor portfolio. It is designed to meet the rigorous reliability standards required for modern electronic systems. The dual configuration allows for independent channel control within a single compact package, optimizing board space compared to using two separate single MOSFETs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Engineers should evaluate alternative components based on matching electrical parameters such as VDSS, RDS(on), and package dimensions if substitution is necessary.

FAQ

What does the '-AQ' suffix indicate for this model?

The '-AQ' suffix signifies that the DI017P03PT2-AQ is currently in the process of AEC-Q101 qualification.

What is the maximum junction temperature rating?

The maximum junction temperature (Tjmax) for this component is 175°C.

How is the on-state resistance specified?

The RDS(on) is specified as less than 30 mΩ at a gate-source voltage of 4.5 V and a drain current of 5 A.

DI017P03PT2-AQDI017P03PT2-AQ
$0.30
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