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Product Detailed Parameters
- Description：DI022N20PQ
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI022N20PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 (TDSON-8/DFN5060) package. It features a drain-source voltage of 200 V and a continuous drain current of 22 A at 25°C case temperature. The device exhibits a typical on-state resistance of 42 mΩ and supports a power dissipation of 60 W. Key electrical parameters include a gate-source threshold voltage ranging from 2 V to 4 V, total gate charge of 16 nC, and single pulse avalanche energy of 82 mJ. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Logic level gate drive capability for efficient control
- Low profile, space-saving surface mount package design
- Avalanche rated with 100% avalanche testing performed
- Fast switching times combined with low gate charge
Applications
- DC/DC Converters
- Power Supplies and UPS systems
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm RoHS and REACH status requirements with the supplier before finalizing orders.
Selection Notes
Select this component for applications requiring a compact footprint with high current handling capabilities. The logic level gate drive simplifies driver circuit design. Ensure thermal management meets the junction-to-case thermal resistance requirements for the intended operating environment.
Part Context
This part belongs to Diotec's portfolio of discrete semiconductors designed for modern electronics. It is manufactured by Diotec Semiconductor AG, a company established in Germany in 1973. The product line includes various diodes, transistors, and MOSFETs for industrial and consumer applications.
Replacement Considerations
Check for equivalent parts with matching pinout and electrical ratings. Verify that any substitute offers comparable RDS(on), VDSS, and package dimensions. Ensure thermal characteristics align with the original design constraints.
FAQ
What is the maximum single pulse avalanche energy?
The DI022N20PQ supports a single pulse avalanche energy of 82 mJ under specified test conditions.
Does the DI022N20PQ support automotive standards?
The standard DI022N20PQ is commercial/industrial grade. Automotive grades are available with specific suffixes: -Q for AEC-Q101 compliant and -AQ for AEC-Q101 qualified.
